Furukawa Electric and Fuji Electric Launch GaN Power Device R&D

Furukawa Electric and Fuji Electric Holdings jointly announced on Monday they establish a research association to develop gallium nitride (GaN) semiconductor power devices. Furukawa Electric and Fuji Electric Advanced Technology, Fuji Electric Holdings’ R&D subsidiary, are belonged to the association and each company invests 4 billion yen for the first-year operation. The companies aim to commercialize GaN power devices for hybrid cars, electric vehicles, industrial power supplies and inverters in fiscal 2011 ending in March 2012.

The research association is established under Japanese low called revised Research Association for Mining and Manufacturing Technology Act. The association targets 3-year R&D works, involving a possibility to convert the association into a joint venture company after 3 years. They will develop GaN power diode and power MOSFET (metal oxide semiconductor field effect transistor) by forming GaN layer on silicon wafers.

In fiscal 2009, 22 researchers will participate in the R&D. They will try to improve performances of GaN wafers and chips at Furukawa Electric’s Yokohama R&D Laboratory, Japan. In fiscal 2010, they will enlarge the R&D operation to Fuji Electric Advanced Technology’s Matsumoto branch for sample production. In the final year, they eye the commercial production of GaN power devices.

Power devices are mainly used for power supply control.